CdSe/ZnS quantum dots as a booster in the active layer of distributed ternary organic photovoltaics

• Gabriela Lewińska,
• Piotr Jeleń,
• Zofia Kucia,
• Maciej Sitarz,
• Łukasz Walczak,
• Bartłomiej Szafraniak,
• Jerzy Sanetra and
• Konstanty W. Marszalek

Beilstein J. Nanotechnol. 2024, 15, 144–156, doi:10.3762/bjnano.15.14

• concluded that the best energy match in the donor:acceptor system is for QD600 dots. QD600 dots are the only material that can be considered in the system as a second donor in the energy diagram. The largest HOMO offset may explain the highest efficiency for the QD640-doped cell. The energy offset should be

Impact of device design on the electronic and optoelectronic properties of integrated Ru-terpyridine complexes

• Max Mennicken,
• Sophia Katharina Peter,
• Corinna Kaulen,
• Ulrich Simon and
• Silvia Karthäuser

Beilstein J. Nanotechnol. 2022, 13, 219–229, doi:10.3762/bjnano.13.16

• well to the energy offset, ΔEH = EF − EHOMO, between the Fermi energy of the contacting electrodes and the highest occupied molecular orbital (HOMO) of the Ru complex, which we have recently determined to 330 meV [15]. This suggests that ΔEH is a relevant activation energy in ideal devices to be

• ]. They are formed by two 2.2 nm tunneling gaps bridged by Ru(MPTP)2-complexes strongly coupled to the electrodes and to the AuNP. In this scenario, a transition voltage of 1.17 eV is needed to align the HOMO levels of the Ru complexes with the EF of the electrodes, despite the considerably smaller energy

• offset between EF and HOMO of ΔEH = 0.33 eV. The relatively high transition voltage must be overcome to enable electrical switching of Ru2+/3+ in this device geometry. However, in a device consisting of three AuNPs, for example (Supporting Information File 1, section 8), in addition to single-AuNP

Implementation of data-cube pump–probe KPFM on organic solar cells

• Benjamin Grévin,
• Olivier Bardagot and
• Renaud Demadrille

Beilstein J. Nanotechnol. 2020, 11, 323–337, doi:10.3762/bjnano.11.24

• presented. For a comprehensive introduction to this field, the reader may refer to [25]. Solution-processed organic solar cells [25] rely on the combination of electron donor (D) and acceptor (A) π-conjugated polymers and/or molecules that display a type-II energy offset between their highest occupied

Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO₂/Si₃N₄-coating

• Dirk König,
• Daniel Hiller,
• Noël Wilck,
• Birger Berghoff,
• Merlin Müller,
• Sangeeta Thakur,
• Giovanni Di Santo,
• Luca Petaccia,
• Joachim Mayer,
• Sean Smith and
• Joachim Knoch

Beilstein J. Nanotechnol. 2018, 9, 2255–2264, doi:10.3762/bjnano.9.210

• experiment that usn-Si can experience a considerable energy offset of electronic states by embedding it in silicon dioxide (SiO2) or silicon nitride (Si3N4), whereby a few monolayers (MLs) of SiO2 or Si3N4 are enough to achieve these offsets. Our findings present an alternative to conventional impurity

• doping for ULSI, provide new opportunities for ultralow power electronics and open a whole new vista on the introduction of p- and n-type conductivity into usn-Si. Keywords: energy offset; impurity doping alternative; ultrasmall nanoscale silicon crystals; wires and devices; Introduction Impurity

• without doping, thereby avoiding all dopant-related issues mentioned above. Such conductivity can be induced by an energy offset (ΔE) of the same electronic states (lowest unoccupied molecular orbital (LUMO) or highest occupied molecular orbital (HOMO)) between different regions of the same usn-Si system

Electrical characterization of single molecule and Langmuir–Blodgett monomolecular films of a pyridine-terminated oligo(phenylene-ethynylene) derivative

• Henrry M. Osorio,
• Santiago Martín,
• María Carmen López,
• Santiago Marqués-González,
• Simon J. Higgins,
• Richard J. Nichols,
• Paul J. Low and
• Pilar Cea

Beilstein J. Nanotechnol. 2015, 6, 1145–1157, doi:10.3762/bjnano.6.116

• frontier orbital energies and promotes electron transport by reducing the energy offset between the molecular LUMO and the Fermi level of electrodes [102][103][104]. In particular, DFT-based studies of 1 in single molecule junctions have shown that the total conductance is controlled by eigenchannels